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DDR4/DDR5

02

DDR4/DDR5

Series	DDR4 With Heatsink UDIMM Series(H41 Series)
Capacity	4GB
Model Number	H41 DDR4-PC-4GB
Memory Speed / Frequency	2400MHz	2666MHz
Memory Bandwidth (GB/s)	19200	21300
Rank (1Rx8/2Rx8/8Rx4)	1Rx8	1Rx8
CAS Latency	CL15-15-15-35	CL19-19-19-43
Capacity	8GB
Model Number	H41 DDR4-PC-8GB
Memory Speed / Frequency	2400MHz	3200MHz
Memory Bandwidth (GB/s)	21300	21300
Rank (1Rx8/2Rx8/8Rx4)	2Rx8
CAS Latency	CL19-19-19-43	CL22-22-22-52
Capacity	16GB
Model Number	H41 DDR4-PC-16GB
Memory Speed / Frequency	2666MHz	3200MHz
CAS Latency	CL19-19-19-43	CL22-22-22-52
Capacity	32GB
Model Number	H41 DDR4-PC-32GB
Memory Speed / Frequency	2666MHz	3200MHz
CAS Latency	CL19-19-19-43	CL22-22-22-52
Operating Voltage	1.2V
No. of Memory IC	4//8//16
Power Consumption	3W
Controller IC	NO
Overclock Support (YES / NO)	NO
ECC (Error Correction Code) (YES/NO)	NO
Net Weight (g)	36g
Gross Weight (g)	72g
Pin Count	288
OEM/ODM Support	YES
Heat Sink / Heat Spreader	YES
Form Factor	UDIMM
Computer Memory Type (DRAM/SDRAM)	DRAM
Operating Temperature	0-85℃
Storage Temperature	-40~100℃
Warranty	3 Years
No. of Memory Channels (Single/Dual)	(Single/Dual)
Product Dimension (W x D x H) in mm	138X53X6mm
Buffered / Un-buffered Memory	Un-buffered Memory
Memory IC Brand	Micron/Samsung/Sk Hynix

Series	DDR4 RGB With Heatsink UDIMM Series(RH41 Series)
Capacity	8GB
Model Number	RH41 DDR4-PC-8GB
Memory Speed / Frequency	2666MHz	3000MHz	3200MHz	3600MHz	4200MHz
Memory Bandwidth (GB/s)	21300	21300	21300	21300	21300
Rank (1Rx8/2Rx8/8Rx4)	1Rx8	1Rx8	2Rx8
CAS Latency	CL19-19-19-43	CL22-22-22-52	CL22-22-22-52	CL18-22-22-42	CL19-25-25-45
Operating Voltage	1.2V	1.2V	1.2V	1.35V	1.35V
Capacity	16GB
Model Number	RH41 DDR4-PC-16GB
Memory Speed / Frequency	2666MHz	3000MHz	3200MHz	3600MHz	4200MHz
Memory Bandwidth (GB/s)	21300	21300	21300	21300	21300
Rank (1Rx8/2Rx8/8Rx4)
CAS Latency	CL19-19-19-43	CL22-22-22-52	CL22-22-22-52	CL18-22-22-42	CL19-25-25-45
Operating Voltage	1.2V	1.2V	1.2V	1.35V	1.35V
Capacity	32GB
Model Number	RH41 DDR4-PC-32GB
Memory Speed / Frequency	2666MHz	3000MHz	3200MHz	3600MHz	4200MHz
Memory Bandwidth (GB/s)	21300	21300	21300	21300	21300
CAS Latency	CL19-19-19-43	CL22-22-22-52	CL22-22-22-52	CL18-22-22-42	CL19-25-25-45
Operating Voltage	1.2V	1.2V	1.2V	1.35V	1.35V
No. of Memory IC	4//8//16
Power Consumption	3W
Controller IC	NO
Overclock Support (YES / NO)	NO
ECC (Error Correction Code) (YES/NO)	NO
Net Weight (g)	44g
Gross Weight (g)	80g
Pin Count	288
OEM/ODM Support	YES
Heat Sink / Heat Spreader	YES
RGB lights	YES
Form Factor	UDIMM
Computer Memory Type (DRAM/SDRAM)	DRAM
Operating Temperature	0-85℃
Storage Temperature	-40~100℃
Warranty	3 Years
No. of Memory Channels (Single/Dual)	(Single/Dual)
Product Dimension (W x D x H) in mm	138x53x6mm
Buffered / Un-buffered Memory	Un-buffered Memory
Memory IC Brand	Micron/Samsung/Sk Hynix

Series	DDR4 SODIMM Series
Capacity	4GB
Model Number	DDR4-NB-4GB
Memory Speed / Frequency	2400MHz	2666MHz
Memory Bandwidth (GB/s)	19200	21300
Rank (1Rx8/2Rx8/8Rx4)	1Rx8	1Rx8
CAS Latency	CL15-15-15-35
Capacity	8GB
Model Number	DDR4-NB-8GB
Memory Speed / Frequency	2400MHz	2666MHz/3200MHz
Memory Bandwidth (GB/s)	21300	21300
Rank (1Rx8/2Rx8/8Rx4)	2Rx8	2Rx8
CAS Latency	CL15-15-15-35	CL19-19-19-43
Capacity	16GB
Model Number	DDR4-NB-16GB
Memory Speed / Frequency	2666MHz	3200MHz
CAS Latency	CL19-19-19-43	CL22-22-22-52
Capacity	32GB
Model Number	DDR4-NB-32GB
Memory Speed / Frequency	2666MHz	3200MHz
CAS Latency	CL19-19-19-43	CL22-22-22-52
Operating Voltage	1.2V
No. of Memory IC	4//8//16
Power Consumption	3W
Controller IC	NO
Overclock Support (YES / NO)	NO
ECC (Error Correction Code) (YES/NO)	NO
Net Weight (g)	10g
Gross Weight (g)	25g
Pin Count	260
OEM/ODM Support	YES
Heat Sink / Heat Spreader	NO
Form Factor	SODIMM
Computer Memory Type (DRAM/SDRAM)	DRAM
Operating Temperature	0-70℃
Storage Temperature	-40~85℃
Warranty	3 Years
No. of Memory Channels (Single/Dual)	(Single/Dual)
Product Dimension (W x D x H) in mm	70x30x3mm
Buffered / Un-buffered Memory	Un-buffered Memory
Memory IC Brand	Micron/Samsung/Sk Hynix

Product Line Advantages

01

Built on strategic supply partnerships, CP Vault locks in stable, long-term DRAM resources others can't access.

02

Built on a three-stage validation framework — EVT, DVT, and PVT — CP Vault leaves nothing to chance before a single product ships.

03

From design to mass production — CP Vault's proprietary 10nm-class ASIC test system unifies speed, functional, and burn-in testing under one roof, delivering production-ready quality at scale.

04

In-house testing. Trusted manufacturers. One uncompromising quality standard.

05

Earning top-grade certification from leading professional testing institutions — CP Vault products are validated, verified, and proven to meet the highest quality benchmarks.